BAP64-05W

BAP64-05W PIN DIODES FEATURES High voltage, current controlled RF resistor for RF attenuators and switches Low diode capacitance Low diode forward resistance Low series inductance For applications up to 3 GHz RF attenuators and switches SOT-323 Marking: 5W Maximum Ratings @TA=25℃ Parameter Continuous reverse voltage Continuous Forward Current Power Dissipation Thermal Resistance Junction to Ambient Junction temperature Storage temperature Symbol VR IF PD RθJA Tj TSTG Limits 175 100 200 625 150 -65~+150 Unit V mA mW ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Reverse voltage leakage current Forward voltage Symbol IR VF Test VR=175V VR=20V IF=50mA VR=0, f=1MHz Diode capacitance Cd VR=1V, f=1MHz VR=20V, f=1MHz IF=0.5mA, f=100MHz;note1 Diode forward resistance rD IF=1mA, f=100MHz ;note1 IF=10mA, f=100MHz;note1 IF=100mA, f=100MHz;note1 0.52 0.37 0.23 20 10 2 0.7 1.55 0.35 40 20 3.8 1.35 μS Ω pF conditions MIN TYP MAX 10 1 1.1 UNIT µA V when switched from Charge carrier life time τL IF = 10 mA to IR = 6 mA; RL = 100 Ω; measured at IR =3mA Series inductance LS IF=100mA, f=100MHz 1.4 nH Note 1. Guaranteed on AQL basis: inspection level S4,AQL 1.0. １　 JinYu semiconductor www.htsemi.com BAP64-05W ２　 JinYu semiconductor www.htsemi.com