BAS16V

BAS16V SWITCHING DIODE SOT-563 FEATURES Fast Switching Speed For General Purpose Switching Applications High Conductance 1 Marking: KAM Maximum Ratings @TA=25℃ Parameter Non-Repetitive Peak reverse voltage Peak Repetitive Peak reverse voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Forward Continuous Current Average Rectified Output Current Peak forward surge current @=1.0μs @=1.0s Power Dissipation Thermal Resistance Junction to Ambient Junction temperature Storage temperature Symbol VRM VRRM VRWM VR VR(RMS) IFM IO IFSM PD RθJA Tj TSTG Limits 100 75 53 300 200 2.0 1.0 150 833 150 -65~+150 Unit V V V mA mA A mW K/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Reverse breakdown voltage Reverse voltage leakage current Symbol V(BR) R IR Test conditions MIN 75 1 25 0.715 0.855 1 1.25 2 4 MAX UNIT V µA nA V IR= 100µA VR=75V VR=20V IF=1mA IF=10mA IF=50mA IF=150mA VR=0, f=1MHz IF=IR=10mA,Irr=0.1×IR, RL=100Ω Forward voltage VF Diode capacitance Reveres recovery time CD trr pF nS 1 JinYu semiconductor www.htsemi.com Date:2011/ 05 BAS16V Typical Characteristics 2 JinYu semiconductor www.htsemi.com Date:2011/ 05