BAS40V

BAS40V SCHOTTK Y DIODE SOT-563 FEATURES Low Forward Voltage Drop Fast Switching 1 Marking: KAN Maximum Ratings @TA=25℃ Parameter Non-Repetitive Peak reverse voltage DC Blocking Voltage Average Rectified Output Current Power Dissipation Thermal Resistance. Junction to Symbol VRM VR IO Pd RθJA TJ TSTG Limits 40 200 150 833 -55-125 -65-150 Unit V mA mW ℃/W ℃ ℃ Ambient Air Junction temperature Storage temperature range ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Reverse breakdown voltage Reverse voltage Forward Total voltage leakage current Symbol V(BR) IR VF CT t rr unless Test IR= 10μA VR=30V IF=1mA IF=40mA VR=0,f=1MHz otherwise specified) MIN 40 200 380 1000 5 5 MAX UNIT V nA mV conditions capacitance pF nS Reverse recovery time IF=10mA, IR=IF=1mA RL=100Ω 1 JinYu semiconductor www.htsemi.com Date:2011/ 05 BAS40V Typical Characteristics 2 JinYu semiconductor www.htsemi.com Date:2011/ 05