BAT54T

BAT54T/AT/CT/ST SWITCHING DIODE FEATURES Low Forward Voltage Drop Fast Switching SOT-523 Maximum Ratings @TA=25℃ Parameter Non-Repetitive Peak reverse voltage DC Blocking Voltage Average Rectified Output Current Power Dissipation Junction temperature Storage temperature range Symbol VRM VR IO Pd TJ TSTG Limits 30 200 150 125 -65-125 Unit V mA mW ℃ ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Reverse breakdown voltage Reverse voltage leakage current Symbol V(BR) IR Test IR= 100μA VR=25V IF=0.1mA IF=1mA Forward voltage VF IF=10mA IF=30mA IF=100mA Total capacitance CT t rr VR=1V,f=1MHz IF=IR=10mA, Irr=0.1xIR,RL=100Ω conditions MIN 30 2 240 320 400 500 1000 10 5 pF nS mV MAX UNIT V uA Reverse recovery time １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ BAT54T/AT/CT/ST Typical Characteristics ２　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５