BAT54V

BAT54V SCHOTTKY DIODE SOT-563 FEATURES Surface mount schottky barrier diode arrays 1 Marking: KAV Maximum Ratings @TA=25℃ Parameter Peak Repetitive Peak reverse voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Output Current Power Dissipation Thermal Resistance Junction to Ambient Air Storage temperature Symbol VRRM VRWM VR IO PD RθJA TSTG Limits 30 200 150 833 -65-125 Unit V mA mW ℃/W ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Reverse breakdown voltage Reverse voltage leakage current Symbol V(BR)R IR Test conditions MIN 30 2 320 400 500 1000 10 5 mV MAX UNIT V IR= 100μA VR=25V IF=1mA uA Forward voltage VF IF=10mA IF=30mA IF=100mA VR=1V,f=1MHz IF=10mA, IR=10mA~1mA RL=100Ω Total capacitance CT t rr pF nS Reverse recovery time 1 JinYu semiconductor www.htsemi.com Date:2011/ 05 BAT54V Typical Characteristics 2 JinYu semiconductor www.htsemi.com Date:2011/ 05