BC807-25W

BC80W7 TRANSISTOR (PNP) BC807-16W BC807-25W BC807-40W FEATURES ·Ldeally suited for automatic insertion ·epitaxial planar die construction ·complementary NPN type available(BC817) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR MARKING: 807-16:5A; 807-25:5B; 807-40:5C MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value -50 -45 -5 -0.5 0.3 150 -55-150 Units V V V A W ℃ ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain 807-16 807-25 807-40 Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency VCE(sat) VBE(sat) IC=-500mA, IB= -50mA IC= -500mA, IB= -50mA VCE= -5V, IC= -10mA 100 hFE(1) VCE= -1V, IC= -100mA Symbol VCBO VCEO VEBO ICBO ICEO IEBO Test conditions MIN -50 -45 -5 -0.1 -0.2 -0.1 100 160 250 250 400 600 -0.7 -1.2 V V MHz MAX UNIT V V V IC= -10μA, IE=0 IC= -10mA, IB=0 IE= -1μA, IC=0 VCB= -45V, IE=0 VCE= -40V, IB=0 VEB= -4 V, IC=0 μA μA μA fT f=100MHz １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ BC80W7 Typical Characteristics ２　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５