BC808

BC808 TRANSISTOR (PNP) SOT-23 FEATURES Suitable for AF-Driver stages and low power output stages Complement to BC818 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC* Tj Tstg Parameter Value -30 -25 -5 -0.8 300 150 -65-150 Units V V V A mW ℃ ℃ Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current –Continuous Collector Power Dissipation Junction Temperature Storage Temperature ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) DC current gain hFE(2) Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance VCE(sat) VBE VCE=-1V, IC=-300mA IC=-500mA, IB=-50mA VCE=-1V, IC=-300mA VCE=-5V, IC=-10mA, f=50MHz VCB=-10V, IE=0, f=1MHz Test IC=-100μA, IE=0 IC=-10mA, IB=0 IE=-100μA, IC=0 VCB=-25V, IE=0 VEB=-4V, IC=0 VCE=-1V, IC=-100mA conditions MIN TYP MAX UNIT V V V -30 -25 -5 -0.1 -0.1 100 60 -0.7 -1.2 100 12 40 250-630 5G 630 μA μA V V MHz pF fT Cob CLASSIFICATION OF Rank Range hFE(1) Marking １　 JinYu hFE 16 100-250 5E 25 160-400 5F semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ BC808 Typical Characteristics ２　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ BC808 ３　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５