BC818-25

BC881 TRANSISTOR (NPN) BC818-16 BC818-25 BC818-40 FEATURES For general AF applications High collector current High current gain Low collector-emitter saturation voltage SOT-23 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value 30 25 5 0.5 0.3 150 -55-150 Units V V V A W ℃ ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter voltage Collecter capactiance Transition frequency Symbol VCBO VCEO VEBO ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE(sat) VBE Cob fT Test conditions MIN 30 25 5 0.1 0.1 100 60 0.7 1.2 1.2 6 170 V V V pF MHz 630 MAX UNIT V V V μA μA IC= 10μA, IE=0 IC= 10mA, IB=0 IE= 10μA, IC=0 VCB= 25 V , IE=0 VEB= 4V, IC=0 VCE= 1V, IC= 100mA VCE= 1V, IC= 300mA IC= 500mA, IB= 50mA IC= 500mA, IB= 50mA VCE=1V, IC= 500mA VCB=10V ,f=1MHz VCE= 5 V, f=100MHz IC= 50mA CLASSIFICATION OF Rank Range Marking hFE (1) BC818-16 100-250 6E BC818-25 160-400 6F BC818-40 250-630 6G １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ BC881 Typical Characteristics ２　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５