BC847B

BC846A,B / BC847A, B, C / BC848A, B, C TRANSISTOR (NPN) SOT-23 FEATURES Ideally suited for automatic insertion For Switching and AF Amplifier Applications 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO Parameter Value Units V Collector-Base Voltage BC846 BC847 BC848 80 50 30 VCEO Collector-Emitter Voltage V BC846 BC847 BC848 VEBO IC PC* TJ Tstg Emitter-Base Voltage Collector Current –Continuous Collector Power Dissipation Junction Temperature Storage Temperature 65 45 30 6 0.1 200 150 -65-150 V A mW ℃ ℃ DEVICE MARKING BC846A=1A; BC846B=1B; BC847A=1E; BC847B=1F; BC847C=1G; BC848A=1J; BC848B=1K: BC848C=1L １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ BC846A,B / BC847A, B, C / BC848A, B, C ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage BC846 BC847 BC848 Collector-emitter breakdown voltage BC846 BC847 BC848 Emitter-base breakdown voltage Collector cut-off current BC846 BC847 BC848 Collector cut-off current BC846 BC847 BC848 Emitter cut-off current DC current gain BC846A,847A,848A BC846B,847B,848B BC847C,BC848C Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance VCE(sat) VBE(sat) IC=100mA, IB= 5mA IC=100mA, IB= 5mA VCE= 5 V, IC= 10mA hFE VCE= 5V, IC= 2mA IEBO ICEO ICBO VEBO IE= 10µA, IC=0 VCB=70 V , IE=0 VCB=50 V , IE=0 VCB=30 V , IE=0 VCE=60 V , IB=0 VCE=45 V , IB=0 VCE=30 V , IB=0 VEB=5 V , IC=0 110 200 420 0.1 220 450 800 0.5 1.1 100 V V MHz 0.1 0.1 VCEO IC= 10mA, IB=0 VCBO IC= 10µA, IE=0 Symbol Test conditions MIN 80 50 30 65 45 30 6 V V V TYP MAX UNIT μA μA μA fT Cob f=100MHz VCB=10V,f=1MHz 4.5 pF ２　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ BC846A,B / BC847A, B, C / BC848A, B, C Typical Characteristics ３　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ BC846A,B / BC847A, B, C / BC848A, B, C ４　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５