BC847BV

BC847BV DUAL TRANSISTOR (NPN) SOT-563 FEATURES Epitaxial Die Construction Complementary PNP Type Available (BC857BV) Ultra-Small Surface Mount Package Marking: K4V MAXIMUM RATINGS(TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Thermal Resistance. Junction to Ambient Air Junction Temperature Storage Temperature Value 50 45 6 0.1 0.15 833 150 -55 to +150 Units V V V A W ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter voltage Transition frequency Output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) VCE(sat) VBE(sat) VBE fT Cob NF unless Test otherwise specified) MIN 50 45 6 15 100 200 450 100 300 700 900 580 660 700 770 100 4.5 10 mV mV mV MHz pF dB TYP MAX UNIT V V V nA nA conditions IC=10μA,IE=0 IC=10mA,IB=0 IE=1μA,IC=0 VCB=30V,IE=0 VEB=5V,IC=0 VCE=5V,IC=2mA IC=10mA,IB=0.5mA IC=100mA,IB=5mA IC=10mA,IB=0.5mA IC=100mA,IB=5mA VCE=5V,IC=2mA VCE=5V,IC=10mA VCE=5V,IC=10mA,f=100MHz VCB=10V,IE=0,f=1MHz VCE=5V,Rs=2kΩ, f=1kHz,BW=200Hz Noise Figure 1 JinYu semiconductor www.htsemi.com Date:2011/ 05 BC847BV Typical Characteristics 2 JinYu semiconductor www.htsemi.com Date:2011/ 05