BC857BV

BC857BV DUAL TRANSISTOR (PNP) FEATURES Epitaxial Die Construction Complementary NPN Types Available (BC847BV) Ultra-Small Surface Mount Package Marking: K5V MAXIMUM RATINGS (TA=25℃ unless otherwise noted ) Symbol VCBO VCEO VEBO IC PC RθJA TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Thermal Resistance. Junction to Ambient Air Junction Temperature Storage Temperature Value -50 -45 -5 -0.1 0.15 833 150 -55 to +150 Units V V V A W ℃/W ℃ ℃ SOT-563 ELECTRICAL CHARACTERISTICS(Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current DC current gain Collector-emitter saturation voltage Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO hFE VCE(sat)(1) VCE(sat)(2) VBE(sat)(1) VBE(sat)(2) VBE(1) VBE(2) fT Cob NF Test conditions MIN -50 -45 -5 -15 220 475 -0.1 -0.4 -0.7 -0.9 -0.6 -0.75 -0.82 100 4.5 10 V V V V V V MHz pF dB TYP MAX UNIT V V V nA IC=-10μA,IE=0 IC=-10mA,IB=0 IE=-1μA,IC=0 VCB=-30V,IE=0 VCE=-5V,IC=-2mA IC=-10mA,IB=-0.5mA IC=-100mA,IB=-5mA IC=-10mA,IB=-0.5mA IC=-100mA,IB=-5mA VCE=-5V,IC=-2mA VCE=-5V,IC=-10mA VCE=-5V,IC=-10mA,f=100MHz VCB=-10V,IE=0,f=1MHz VCE=-5V,Ic=-0.2mA, f=1kHZ,Rs=2KΩ,BW=200Hz Base-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Noise figure 1 JinYu semiconductor www.htsemi.com Date:2011/ 05 BC857BV Typical Characteristics 2 JinYu semiconductor www.htsemi.com Date:2011/ 05