BC857S

BC857S Multi-Chip TRANSISTOR (PNP) SOT-363 FEATURES Power dissipation PCM : 300 mW(Tamb=25℃) E1 B1 C2 C1 B2 E2 Collector current ICM : -200 mA Collector-base voltage V V(BR)CBO : -50 Operating and storage junction temperature range TJ,Tstg: -55℃to +150℃ MARKING: 3C ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current DC current gain Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO hFE VCE(sat)(1) Collector-emitter saturation voltage VCE(sat)(2) VBE(1) Base-emitter voltage VBE(2) Transition frequency Collector output capacitance Noise figure fT Cob NF VCE=-5V,IC=-10mA VCE=-5V,IC=-10mA,f=100MHz VCB=-10V,IE=0,f=1MHz VCE=-5V,Ic=-0.2mA, f=1kHZ,Rs=2KΩ,BW=200Hz IC=-100mA,IB=-5mA VCE=-5V,IC=-2mA -0.6 Test conditions MIN -50 -45 -5 TYP MAX UNIT V V V Ic=-10µA,IE=0 Ic=-10mA,IB=0 IE=-10µA,IC=0 VCB=-30V,IE=0 VCE=-5V,IC=-2mA IC=-10mA,IB=-0.5mA -15 125 630 -0.3 -0.65 -0.75 -0.82 200 3.5 2.5 nA V V V V MHz pF dB 1 JinYu semiconductor www.htsemi.com Date:2011/ 05