BC868

BC868 TRANSISTOR (NPN) SOT-89 FEATURES High current Low voltage 1. BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value 32 20 5 1 500 150 -55-150 Units V V V A mW ℃ ℃ 2. COLLECTOR 3. EMITTER ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) DC current gain hFE(2) hFE(3) Collector-emitter saturation voltage VCE(sat) VBE1 Base-emitter voltage VBE2 Transition frequency fT VCE=1V,IC=1A VCE=5V,IC=10mA,f=100MHz 40 1 V MHz Test conditions MIN 32 20 5 0.1 0.1 85 60 50 0.5 0.62 V V 375 TYP MAX UNIT V V V μA μA IC=100μA,IE=0 IC=1mA,IB=0 IE=100μA,IC=0 VCB=25V,IE=0 VEB=5V,IC=0 VCE=1V,IC=500mA VCE=1V,IC=1A VCE=10V,IC=5mA IC=1A,IB=100mA VCE=10V,IC=5mA CLASSIFICATION OF Rank Range Marking hFE(1) BC868-10 85-160 CBC BC868-16 100-250 CCC BC868-25 160-375 CDC １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ BC868 Typical Characteristics ２　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５