BC869
TRANSISTOR (PNP)
FEATURES NPN Complement to BC868 Low Voltage High Current
1. BASE 2. COLLECTOR 3. EMITTER
SOT-89-3L
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value -32 -20 -5 -1 500 250 150 -55~+150 Unit V V V A mW ℃/W ℃ ℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) hFE(2) hFE(3) Collector-emitter saturation voltage Base -emitter voltage Transition frequency VCE(sat) VBE fT Test conditions Min -32 -20 -5 -0.1 -0.1 50 100 60 -0.5 -1 -0.62 V V V MHz 375 Typ Max Unit V V V µA µA
IC=-100µA,IE=0 IC=-1mA,IB=0 IE=-100µA,IC=0 VCB=-25V,IE=0 VEB=-5V,IC=0 VCE=-10V, IC=-5mA VCE=-1V, IC=-0.5A VCE=-1V, IC=-1A IC=-1A,IB=-0.1A VCE=-1V, IC=-1A VCE=-10V, IC=-5mA VCE=-5V,IC=-10mA, f=100MHz
40
CLASSIFICATION OF hFE(2)
RANK RANGE MARKING BC869 100–375 CEC BC869-16 100–250 CGC BC869-25 160–375 CHC
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semiconductor
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