BCV27

BCV27 TRANSISTOR (NPN) FEATURES  High Collector Current  High Current Gain MARKING:FF 1. BASE SOT–23 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RΘJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value 40 30 10 500 300 416 150 -55～+150 Unit V V V mA mW ℃/W ℃ ℃ 2. EMITTER 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) DC current gain hFE(2) hFE(3) hFE(4) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance VCE(sat) VBE(sat) fT Cob Test conditions Min 40 30 10 0.1 0.1 4000 10000 20000 4000 1 1.5 170 3.5 V V MHz pF Typ Max Unit V V V µA µA IC=100µA, IE=0 IC=10mA, IB=0 IE=10µA, IC=0 VCB=30V, IE=0 VEB=4V, IC=0 VCE=1V, IC=100µA VCE=5V, IC=10mA VCE=5V, IC=100mA VCE=5V, IC=0.5A IC=100mA, IB=0.1mA IC=100mA, IB=0.1mA VCE=5V,IC=50mA, f=100MHz VCB=10V, IE=0, f=1MHz １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５