BCX56

BCX54 ,BCX55,BCX56 TRANSISTOR (NPN) SOT-89-3L FEATURES PNP Complements to BCX51,BCX52,BCX53 Low Voltage High Current APPLICATIONS Driver Stages of Audio Amplifiers MARKING:BCX54:BA, BCX54-10:BC, BCX54-16:BD BCX55:BE, BCX55-10:BG, BCX55-16BM BCX56:BH, BCX56-10:BK, BCX56-16:BL MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO Parameter BCX54 Collector-Base Voltage BCX55 BCX56 VCEO Collector-Emitter Voltage BCX54 BCX55 BCX56 VEBO IC PC RθJA Tj Tstg Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value 45 60 100 45 60 80 5 1 500 250 150 -55~+150 1. BASE 2. COLLECTOR 3. EMITTER Unit V V V A mW ℃/W ℃ ℃ １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ BCX54 ,BCX55,BCX56 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Symbol V(BR)CBO Test conditions BCX54 IC=100µA,IE=0 BCX55 BCX56 BCX54 Collector-emitter breakdown voltage V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) DC current gain hFE(2) hFE(3) Collector-emitter saturation voltage Base -emitter voltage Transition frequency VCE(sat) VBE fT IC=1mA,IB=0 IE=100µA,IC=0 VCB=30V,IE=0 VEB=5V,IC=0 VCE=2V, IC=5mA VCE=2V, IC=150mA VCE=2V, IC=0.5A IC=0.5A,IB=50mA VCE=2V, IC=0.5A VCE=5V,IC=10mA, f=100MHz 130 40 63 25 0.5 1 V V MHz 250 BCX55 BCX56 Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Min 45 60 100 45 60 80 5 0.1 0.1 V µA µA V V Typ Max Unit CLASSIFICATION OF hFE(2) BCX54 RANK BCX55 BCX56 RANGE 63–250 BCX54-10 BCX55-10 BCX56-10 63–160 BCX54-16 BCX55-16 BCX56-16 100–250 ２　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５