BCX69

BCX69 TRANSISTOR (PNP) FEATURES For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary type: BCX68 (NPN) SOT-89 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction Temperature Storage Temperature Value -25 -20 -5 -1 0.8 150 -65-150 Units V V V A W ℃ ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain BCX69 BCX69-10 BCX69-16 BCX69-25 Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO 1) Test conditions MIN -25 -20 -5 TYP MAX UNIT V V V IC=-10μA , IE=0 IC=-30mA , IB=0 IE=-1μA, IC=0 VCB=-25V, IE=0 VEB=-5V, IC=0 -0.1 -0.1 85 85 100 160 50 60 -0.5 -0.6 -1 100 375 160 250 375 μA μA hFE (1) VCE=-1V, IC=-500mA hFE(2) 1) VCE=-10V, IC=-5mA VCE=-1V, IC=-1A IC=-1A, IB=-100mA IC=-5mA, VCE=-10V IC=-1A, VCE=-1V VCE=-5V, IC=-100mA f=20MHz hFE(3) 1) Collector-emitter saturation voltage Base-emitter voltage VCE(sat) VBE(ON) fT 1) V V MHz Transition frequency 1) Pulse test: t ≤=300µs, D = 2% BCX69-10=CF1 BCX69-16=CG1 BCX69-25=CH1 MARKING: BCX69=CE1 １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ BCX69 Typical Characteristics ２　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５