BF822

BF8 20/ BF8 22 TRANSISTOR (NPN) SOT-23 FEATURES Low current (max.50 mA) High voltage (max.300V) Telephony and professional communication equipment. 1. BASE 2. EMITTER 3. COLLECTOR MARKING: BF820:1V, BF822: 1X MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC Tj Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Parameter BF820 BF822 BF820 BF822 Value 300 250 300 250 5 50 0.25 150 -55-150 Units V V V mA W ℃ ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) Test conditions BF820 BF822 BF820 BF822 MIN 300 250 300 250 5 0.01 0.05 50 0.6 60 1.6 V MHz pF MAX UNIT V V V IC=100μA, IE=0 IC=1mA, IB=0 IE= 100μA, IC=0 VCB=200V,IE=0 VEB= 5V,IC=0 VCE= 20V,IC=25mA IC=30mA,IB= 5mA μA μA fT Cob VCE=10V, IC= 10mA,f=100MHz VCB=30V,IE=0,f=1MHz １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ BF8 20/ BF8 22 Typical Characteristics ２　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５