BSR43

BRS43 TRANSISTOR (NPN) FEATURES Low Voltage High Current Complement to BSR33 AAPLICATIONS Thick and Thin-Film Circuits Telephony and General Industrial Applications MARKING:AR4 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value 90 80 5 1 500 250 150 -55~+150 Unit V V V A mW ℃/W ℃ ℃ SOT-89-3L 1. BASE 2. COLLECTOR 3. EMITTER ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1)* hFE(2)* hFE(3)* Collector-emitter saturation voltage VCE(sat)* VBE(sat)* fT Cob Cib Test conditions Min 90 80 5 100 100 30 100 50 0.25 0.5 1 1.2 100 12 90 V V V V MHz pF pF 300 Typ Max Unit V V V nA nA IC=100µA,IE=0 IC=1mA,IB=0 IE=100µA,IC=0 VCB=60V,IE=0 VEB=5V,IC=0 VCE=5V, IC=0.1mA VCE=5V, IC=100mA VCE=5V, IC=500mA IC=150mA,IB=15mA IC=500mA,IB=50mA IC=150mA,IB=15mA IC=500mA,IB=50mA VCE=10V,IC=50mA, f=100MHz VCB=10V, IE=0, f=1MHz VBE=0.5V, IC=0, f=1MHz Base-emitter saturation voltage Transition frequency Collector output capacitance Emitter input capacitance *Pulse test １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５