BST39

BST39,BST40 TRANSISTOR (NPN) FEATURES Low Current High Voltage APPLICATIONS General Purpose Switching and Amplification MARKING:BCT39:AT1 BCT40:AT2 SOT-89-3L 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature BST39 BST40 BST39 BST40 Value 400 300 350 250 5 100 500 250 150 -55~+150 Unit V V V mA mW ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) fT Cob Test conditions BST39 BST40 BST39 BST40 Min 400 300 350 250 5 20 100 40 0.5 70 2 V MHz pF Typ Max Unit V V V nA nA IC=100µA,IE=0 IC=1mA,IB=0 IE=100µA,IC=0 VCB=300V,IE=0 VEB=5V,IC=0 VCE=10V, IC=20mA IC=50mA,IB=4mA Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance VCE=10V,IC=10mA, f=100MHz VCB=10V, IE=0, f=1MHz １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５