BST52

BST52 TRANSISTOR (NPN) FEATURES Low Voltage High Current Integrated Diode and Resistor APPLICATIONS Industrial Switching Applications: Print Hammer, Solenoid, Relay and Lamp Driving SOT-89-3L 1. BASE 2. COLLECTOR 3. EMITTER MARKING:AS3 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value 90 80 500 500 250 150 -55~+150 Unit V V mA mW ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter sustain voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Symbol V(BR)CBO VCES ICES IEBO hFE VCE(sat) VBE(sat) fT Test conditions Min 90 80 50 50 1000 2000 1.3 1.9 200 V V MHz Typ Max Unit V V nA nA IC=100µA,IE=0 VBE=0,IC=100µA VBE=0, VCE=80V VEB=4V,IC=0 VCE=10V, IC=150mA VCE=10V, IC=500mA IC=500mA,IB=0.5mA IC=500mA,IB=0.5mA VCE=5V,IC=500mA, f=100MHz １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５