BZT52C11W

BZT52C…W SILICON PLANAR ZENER DIODES Features • Ideally suited for automated assembly processes • Total power dissipation: max. 500 mW PINNING PIN 1 2 1 DESCRIPTION Cathode Anode 2 Top View Simplified outline SOD-123 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Power Dissipation Junction Temperature Storage Temperature Range Symbol Ptot TJ TStg Value 500 150 - 65 to + 150 Unit mW O C C O Characteristics at Ta = 25 OC Parameter Thermal Resistance Junction to Ambient Air Forward Voltage at IF = 10 mA Symbol RthA VF Max. 340 0.9 Unit O C/W V １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ BZT52C…W Characteristics at Ta = 25 OC Zener Voltage Range 1) Type BZT52C2V4W BZT52C2V7W BZT52C3V0W BZT52C3V3W BZT52C3V6W BZT52C3V9W BZT52C4V3W BZT52C4V7W BZT52C5V1W BZT52C5V6W BZT52C6V2W BZT52C6V8W BZT52C7V5W BZT52C8V2W BZT52C9V1W BZT52C10W BZT52C11W BZT52C12W BZT52C13W BZT52C15W BZT52C16W BZT52C18W BZT52C20W BZT52C22W BZT52C24W BZT52C27W BZT52C30W BZT52C33W BZT52C36W BZT52C39W 1) Dynamic Impedance ZZT Ω (Max.) 100 100 95 95 90 90 90 80 60 40 10 15 15 15 15 20 20 25 30 30 40 45 55 55 70 80 80 80 90 130 ZZK Ω (Max.) 600 600 600 600 600 600 600 500 480 400 150 80 80 80 100 150 150 150 170 200 200 225 225 250 250 300 300 325 350 350 at IZK mA 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 0.5 0.5 0.5 0.5 0.5 Reverse Leakage Current IR μA (Max.) 50 20 10 5 5 3 3 3 2 1 3 2 1 0.7 0.5 0.2 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 at VR V 1 1 1 1 1 1 1 2 2 2 4 4 5 5 6 7 8 8 8 10.5 11.2 12.6 14 15.4 16.8 18.9 21 23.1 25.2 27.3 Marking Code MH MJ MK MM MN MP MR MX MY MZ NA NB NC ND NE NF NH NJ NK NM NN NP NR NX NY NZ PA PB PC PD Vznom V 2.4 2.7 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 lZT mA 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 2 2 2 2 2 for VZT V 2.2...2.6 2.5...2.9 2.8...3.2 3.1...3.5 3.4...3.8 3.7...4.1 4...4.6 4.4...5 4.8...5.4 5.2...6 5.8...6.6 6.4...7.2 7...7.9 7.7...8.7 8.5...9.6 9.4...10.6 10.4...11.6 11.4...12.7 12.4...14.1 13.8...15.6 15.3...17.1 16.8...19.1 18.8...21.2 20.8...23.3 22.8...25.6 25.1...28.9 28...32 31...35 34...38 37...41 VZ is tested with pulses (20 ms). ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ BZT52C…W PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-123 ∠ ALL ROUND c HE D A E bp UNIT mm A 1.15 1.05 bp 0.6 0.5 c 0.135 0.100 A D 2.7 2.6 E 1.65 1.55 HE 3.9 3.7 v 0.2 ∠ 5 O ３ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５