BZX84C…W Series
SILICON PLANAR ZENER DIODES
3
1
2
1. Anode 3. Cathode
Absolute Maximum Ratings (Ta = 25 OC)
Parameter Power Dissipation Operating Junction and Storage Temperature Range Symbol PD T j ,T S
Value 200 - 55 to + 150
Unit mW
O
C
Electrical Characteristics ( Ta = 25 OC unless otherwise noted, VF < 0.9 V at IF = 10 mA)
Type BZX84C2V4W BZX84C2V7W BZX84C3V0W BZX84C3V3W BZX84C3V6W BZX84C3V9W BZX84C4V3W BZX84C4V7W BZX84C5V1W BZX84C5V6W BZX84C6V2W BZX84C6V8W BZX84C7V5W BZX84C8V2W BZX84C9V1W BZX84C10W BZX84C11W BZX84C12W BZX84C13W BZX84C15W BZX84C16W BZX84C18W BZX84C20W BZX84C22W BZX84C24W BZX84C27W BZX84C30W BZX84C33W BZX84C36W BZX84C39W
1)
Marking Code EA EB EC ED EE EF EH EJ EK EM EN EP ER EX EY EZ FA FB FC FD FE FF FH FJ FK FM FN FP FR FX
Zener Voltage Range 1) VZ Min.(V) 2.2 2.5 2.8 3.1 3.4 3.7 4 4.4 4.8 5.2 5.8 6.4 7 7.7 8.5 9.4 10.4 11.4 12.4 13.8 15.3 16.8 18.8 20.8 22.8 25.1 28 31 34 37 Max.(V) 2.6 2.9 3.2 3.5 3.8 4.1 4.6 5 5.4 6 6.6 7.2 7.9 8.7 9.6 10.6 11.6 12.7 14.1 15.6 17.1 19.1 21.2 23.3 25.6 28.9 32 35 38 41 at lZT mA 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 2 2 2 2 2 ZZT Max.(Ω) 100 100 95 95 90 90 90 80 60 40 10 15 15 15 15 20 20 25 30 30 40 45 55 55 70 80 80 80 90 130
Dynamic Resistance at lZT mA 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 2 2 2 2 2 ZZK Max.(Ω) 600 600 600 600 600 600 600 600 500 480 400 150 80 80 80 100 150 150 150 170 200 200 225 225 250 250 300 300 325 350 at IZK mA 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 0.5 0.5 0.5 0.5 0.5
Reverse Current IR Max.(µA) 50 20 20 5 5 3 3 3 2 1 3 2 1 0.7 0.5 0.2 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 at VR V 1 1 1 1 1 1 1 2 2 2 4 4 5 5 6 7 8 8 8 10.5 11.2 12.6 14 15.4 16.8 18.9 21 23.1 25.2 27.3
Tested with pulses tp = 20 ms.
1
JinYu
semiconductor
www.htsemi.com
Date:2011/05
BZX84C…W Series
Electrical Characteristics ( Ta = 25 OC unless otherwise noted, VF < 0.9 V at IF = 10 mA)
Type BZX84C43W BZX84C47W BZX84C51W BZX84C56W BZX84C62W BZX84C68W BZX84C75W
1)
Marking Code FY FZ KA KB KC KD KE
Zener Voltage Range 1) VZ Min.(V) 40 44 48 52 58 64 70 Max.(V) 46 50 54 60 66 72 79 at lZT mA 2 2 2 2 2 2 2 ZZT Max.(Ω) 150 170 180 200 215 240 255
Dynamic Resistance at lZT mA 2 2 2 2 2 2 2 ZZK Max.(Ω) 375 375 400 425 450 475 500 at IZK mA 0.5 0.5 0.5 0.5 0.5 0.5 0.5
Reverse Current IR Max.(µA) 0.1 0.1 0.1 0.1 0.1 0.1 0.1 at VR V 30.1 32.9 35.7 39.2 43.4 47.6 52.5
Tested with pulses tp = 20 ms.
2
JinYu
semiconductor
www.htsemi.com
Date:2011/05
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