C1815

C1815 TRANSISTOR (NPN) SOT-23 FEATURES Power dissipation 1. BASE MARKING : C1815=HF 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC Tj Tstg Parameter Value 60 50 5 150 200 150 -55-150 Units V V V mA mW ℃ ℃ Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Symbol V(BR)CBO V(BR)CEO ICBO ICEO IEBO hFE VCE(sat) VBE(sat) fT Test conditions MIN 60 50 0.1 0.1 0.1 130 400 0.25 1 80 V V MHz TYP MAX UNIT V V uA uA uA IC= 100uA, IE=0 IC= 0.1mA, IB=0 VCB=60V, IE=0 VCE=50V, IB=0 VEB= 5V, IC=0 VCE= 6V, IC= 2mA IC=100mA, IB= 10mA IC=100mA, IB= 10mA VCE=10V, IC= 1mA, f=30MHz CLASSIFICATION Rank Range OF hFE L 130-200 H 200-400 １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ C1815 Typical Characteristics VCE(sat)/VBE(sat)-IC fT-Ic ２　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５