C945

C945 TRANSISTOR (NPN) SOT-23 FEATURE Excellent hFE Linearity Low noise Complementary to A733 MARKING:CR· MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value 60 50 5 150 200 150 -55-150 Units V V V mA mW ℃ ℃ 1. BASE 2. EMITTER 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Noise figure Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICER IEBO hFE(1) hFE(2) VCE(sat) VBE(sat) fT Cob NF Test conditions MIN 60 50 5 0.1 0.1 0.1 130 40 0.3 1 150 3.0 4 10 V V MHz pF dB 400 TYP MAX UNIT V V V uA uA uA IC=100uA, IE=0 IC=1mA , IB=0 IE=0.1mA, IC=0 VCB=60V, IE=0 VCE=55V,R=10MΩ VEB=5V , VCE=6 V , VCE=6 V , IC=0 IC=1mA IC=0.1mA IC=100mA, IB=10mA IC=100mA, IB=10mA VCE=6V,IC=10mA,f =30 MHz VCB=10V,IE=0,f=1MHZ VCE=6V,IC=0.1mA Rg=10kΩ,f=1kMHZ CLASSIFICATION OF hFE(1) Rank Range L 130-200 H 200-400 １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ C945 Typical characteristics ２　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５