ES1A

ES1A THRU ES1M • • • • •







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For
Surface
Mount Applications







Extremely Low Thermal Resistance Easy Pick And Place High Temp Soldering: 250 °C for 10 Seconds At Terminals Superfast Recovery Times For High Efficiency 1 Amp Super Fast Recovery Silicon Rectifier 50 to 1000 Volts Maximum Ratings • • • Operating Temperature: -50 °C to +150°C Storage Temperature: -50°C to +150°C Maximum Thermal Resistance; 15 °C/W Junction To Lead Device Maximum Maximum Maximum Catalog Marking Recurrent RMS DC Number Peak Reverse Voltage Blocking Voltage Voltage ES1A ES1A 50V 35V 50V ES1B ES1B 100V 70V 100V ES1C ES1C 150V 105V 150V 200V 140V 200V ES1D ES1D ES1G ES1G 400V 280V 400V ES1J ES1J 600V 420V 600V ES1K ES1K 800V 560V 800V ES1M 1000V 700V 1000V ES1M Average Forward Current Peak Forward Surge Current Maximum Instantaneous Forward Voltage ES1A-D ES1G-K ES1M DO-214AC (SMAJ) (High Profile) H Cathode Band J A C E F G D B Electrical Characteristics @ 25°C Unless Otherwise Specified IF(AV) IFSM 1.0A 30A TJ = 75°C 8.3ms, half sine DIM A B C D E F G H J DIMENSIONS INCHES MIN .078 .067 .002 --.035 .065 .205 .160 .100 MM MIN 1.98 1.70 .05 --.89 1.65 5.21 4.06 2.57 VF .975V 1.35V 1.60V IFM = 1.0A; TJ = 25°C* TJ = 25°C TJ = 100°C MAX .116 .089 .008 .02 .055 .096 .224 .180 .112 MAX 2.95 2.25 .20 .51 1.40 2.45 5.69 4.57 2.84 NOTE Maximum DC Reverse Current At Rated DC Blocking Voltage Maximum Reverse Recovery Time ES1A-D ES1G-K ES1M IR 5µA 100µA SUGGESTED SOLDER PAD LAYOUT 0.090” Trr CJ 50ns 60ns 100ns Typical Junction Capacitance 45pF IF=0.5A, IR=1.0A, Irr=0.25A Measured at 1.0MHz, VR=4.0V 0.085” 0.070” *Pulse test: Pulse width 200 µsec, Duty cycle 2% １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ ES1A THRU ES1M Figure 1 Typical Forward Characteristics 20 10 6 4 2 Amps 1 .6 .4 .2 .1 .06 .04 .02 .01 .2 .4 .6 Volts Instantaneous Forward Current - Amperesversus Instantaneous Forward Voltage - Volts .8 1.0 1.2 Amps 2.4 2.2 2.0 1.8 25°C 1.6 1.4 1.2 1.0 .8 .6 .4 Single Phase, Half Wave .2 60Hz Resistive or Inductive Load 0 0 25 50 75 100 125 150 Figure 2 Forward Derating Curve °C Average Forward Rectified Current - Amperes ersus v Ambient Temperature - °C Figure 3 Junction Capacitance 100 60 40 20 pF 10 6 4 2 1 .1 .2 .4 1 Volts 2 4 10 20 40 100 200 400 1000 TJ=25°C Junction Capacitance - pFversus Reverse Voltage - Volts ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ ES1A thru ES1M Figure 4 Peak Forward Surge Current 30 25 20 15 Amps 10 5 0 1 4 6 8 10 Cycles Peak Forward Surge Current - Amperesversus Number Of Cycles At 60Hz - Cycles 20 40 60 80 100 Round Lead Process Figure 5 New SMA Assembly 2 Figure 6 Reverse Recovery Time Characteristic And Test Circuit Diagram 50Ω 10Ω trr +0.5A 0 25Vdc Pulse Generator Note 2 1Ω Oscilloscope Note 1 -0.25 -1.0 1cm Set Time Base for 20/100ns/cm Notes: 1. Rise Time = 7ns max. Input impedance = 1 megohm, 22pF 2. Rise Time = 10ns max. Source impedance = 50 ohms 3. Resistors are non-inductive 3