FDN335N

FDN335N 20V N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), Vgs@ 2.5V, Ids@ 1.7A= 70m Ω RDS(ON), Vgs@ 2.5V, Ids@ 1.5A= 100mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D G S OT-23(PACKAGE) S REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0° 10 ° Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1) Symbol Limit Unit VDS VGS ID IDM 2) 20 ±8 1.7 8 1.25 0.8 -55 to 150 100 166 o V A TA = 25o TA = 75oC 2) Maximum Power Dissipation PD TJ, Tstg RthJA W o Operating Junction and Storage Temperature Range Junction-to-Ambient Thermal Resistance (PCB mounted) Junction-to-Ambient Thermal Resistance (PCB mounted) C 3) C/W Notes 1) Pulse width limited by maximum junction temperature. 2) Surface Mounted on FR4 Board, t v 5 sec. 3) Surface Mounted on FR4 Board. １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ FDN335N 20V N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS Parameter Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Gate Threshold Voltage Zero Gate Voltage Drain Current 0 Gate Body Leakage Forward Transconductance Dynamic 1) 1) 1) Symbol Test Condition Min. Typ. Miax. Unit BVDSS RDS(on) VGS = 0V, ID = 10uA VGS = 4.5V, I D = 1.7A VGS = 2.5V, I D = 1.5A 20 55 78 0.4 1 ±100 7 70 100 1.5 V mΩ V uA nA S VGS(th) IDSS IGSS gfs VDS =VGS, ID = 50uA VDS = 16V, V GS = 0V VGS = ± 8V, VDS = 0V VDS = 5V, I D = 1.5A Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Max. Diode Forward Current Diode Forward Voltage 1) Qg VDS = 10V, I D = 3.6A Qgs Qgd td(on) tr td(off) tf Ciss VDS = 10V, V = 0V GS Coss f = 1.0 MHz Crss ID ^ 3.6A,V GEN = 4.5V RG = 6 Ω VDD = 10V, RL=5.5 Ω VGS = 4.5V 5.4 0.65 1.6 12 36 34 10 340 115 33 10 nC 25 60 ns 60 25 pF IS VSD IS = 1.6A, V GS 0.6 A V = 0V 1.2 Pulse test: pulse width