FMMT449

FMMT449 TRANSISTOR (NPN) FEATURES  Low Equivalent On-Resistance SOT–23 MARKING: 449 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RΘJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value 50 30 5 1 200 625 150 -55～+150 Unit V V V A mW ℃/W ℃ ℃ 1. BASE 2. EMITTER 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) * DC current gain hFE(2) * hFE(3) * hFE(4) * Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance *Pulse test VCE(sat)1* VCE(sat)2* VBE(sat)* VBE* fT Cob Test conditions Min 50 30 5 0.1 0.1 70 100 80 40 0.5 1 1.25 1 150 15 V V V V MHz pF 300 Typ Max Unit V V V µA µA IC=1mA, IE=0 IC=10mA, IB=0 IE=100µA, IC=0 VCB=40V, IE=0 VEB=4V, IC=0 VCE=2V, IC=50mA VCE=2V, IC=500mA VCE=2V, IC=1A VCE=2V, IC=2A IC=1A, IB=100mA IC=2A, IB=200mA IC=1A, IB=100mA VCE=2V, IC=1A VCE=10V,IC=50mA, f=100MHz VCB=10V, IE=0, f=1MHz １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５