FMMT491

FMMT491 TRANSISTOR (NPN) FEATURES Low equivalent on-resistance 1. BASE 2. EMITTER 3. COLLECTOR SOT-23 Marking :491 MAXIMUM RATINGS(TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value 80 60 5 1 250 150 -55-150 Units V V V A mW ℃ ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO1 V(BR)EBO ICBO IEBO hFE(1) DC current gain hFE(2) hFE(3) 1 1 Test conditions MIN 80 60 5 TYP MAX UNIT V V V IC=100μA,IE=0 IC=10mA,IB=0 IE=100μA,IC=0 VCB=60V,IE=0 VEB=4V,IC=0 VCE=5V,IC=1mA VCE=5V,IC=500mA VCE=5V,IC=1A VCE=5V,IC=2A 0.1 0.1 100 100 80 30 0.25 0.5 1.1 1 150 10 300 μA μA hFE(4) 1 Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance 1 VCE(sat)1 1 IC=500mA,IB=50mA IC=1A,IB=100mA IC=1A,IB=100mA VCE=5V,IC=1A VCE=10V,IC=50mA,,f=100MHz VCB=10V,f=1MHz V V V V MHz pF VCE(sat)2 1 VBE(sat) 1 VBE1 fT Cob Measured under pulsed conditions, Pulse width=300μs, Duty cycle≤2%. １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ FMMT491 Typical Characteristics ２　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５