FMMT493

FMMT493 TRANSISTOR (NPN) SOT–23 FEATURES  Complementary Type FMMT593 MARKING:493 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RΘJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value 120 100 5 1000 250 500 150 -55～+150 Unit V V V mA mW ℃/W ℃ ℃ 1. BASE 2. EMITTER 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICES IEBO hFE(1) * hFE(2) * DC current gain hFE(3) * hFE(4) * Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance VCE(sat)1* VCE(sat)2* VBE(sat)* VBE* fT Cob Test conditions Min 120 100 5 0.1 0.1 0.1 100 100 60 20 0.3 0.6 1.15 1 150 10 V V V V MHz pF 300 Typ Max Unit V V V µA µA µA IC=100µA, IE=0 IC=10mA, IB=0 IE=100µA, IC=0 VCB=100V, IE=0 VCES=100V, IE=0 VEB=4V, IC=0 VCE=10V, IC=1mA VCE=10V, IC=250mA VCE=10V, IC=0.5A VCE=10V, IC=1A IC=500mA, IB=50mA IC=1A, IB=100mA IC=1A, IB=100mA VCE=10V, IC=1A VCE=10V,IC=50mA, f=100MHz VCB=10V, IE=0, f=1MHz *Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%. １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５