FMMT593

FMMT593 TRANSISTOR (PNP) SOT–23 FEATURES  Complementary Type FMMT493 MARKING:593 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RΘJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value -120 -100 -5 -1 250 500 150 -55～+150 Unit V V V A mW ℃/W ℃ ℃ 1. BASE 2. EMITTER 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICES IEBO hFE(1) * DC current gain hFE(2) * hFE(3) * hFE(4) * Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance VCE(sat)1* VCE(sat)2* VBE(sat)* VBE* fT Cob Test conditions Min -120 -100 -5 -0.1 -0.1 -0.1 100 100 100 50 -0.2 -0.3 -1.1 -1 50 5 V V V V MHz pF 300 Typ Max Unit V V V µA µA µA IC=-100µA, IE=0 IC=-10mA, IB=0 IE=-100µA, IC=0 VCB=-100V, IE=0 VCES=-100V, IE=0 VEB=-4V, IC=0 VCE=-5V, IC=-1mA VCE=-5V, IC=-250mA VCE=-5V, IC=-0.5A VCE=-5V, IC=-1A IC=-250mA, IB=-25mA IC=-500mA, IB=-50mA IC=-500mA, IB=-50mA VCE=-5V, IC=-1mA VCE=-10V,IC=-50mA, f=100MHz VCB=-10V, IE=0, f=1MHz *Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%. １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５