HM4033

HM433 0 TRANSISTOR (PNP) FEATURES High Current General Purpose Amplifier Applications SOT-89-3L 1. BASE 2. COLLECTOR 3. EMITTER MARKING:H4033 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value -80 -80 -5 -1 500 250 150 -55~+150 Unit V V V A mW ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1)* DC current gain hFE(2)* hFE(3)* hFE(4)* Collector-emitter saturation voltage VCE(sat)* VBE(sat)* fT Cob Test conditions Min -80 -80 -5 -100 -100 75 100 70 25 -0.15 -0.5 -0.9 -1.1 100 20 V V V V MHz pF Typ Max Unit V V V nA nA IC=-10µA,IE=0 IC=-10mA,IB=0 IE=-10µA,IC=0 VCB=-60V,IE=0 VEB=-5V,IC=0 VCE=-5V, IC=-0.1mA VCE=-5V, IC=-100mA VCE=-5V, IC=-500mA VCE=-5V, IC=-1A IC=-150mA,IB=-15mA IC=-500mA,IB=-50mA IC=-150mA,IB=-15mA IC=-500mA,IB=-50mA VCE=-10V,IC=-50mA, f=100MHz VCB=-10V, IE=0, f=1MHz Base-emitter saturation voltage Transition frequency Collector output capacitance *Pulse test １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５