KSA1182

KSA1182 TRANSISTOR (PNP) FEATURES Complement to KSC2859 1. BASE SOT-23 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value -35 -30 -5 -0.5 150 150 -55-150 Units V V V A mW ℃ ℃ 2. EMITTER 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) DC current gain hFE(2) Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance VCE(sat) VBE fT Cob unless Test otherwise specified) MIN -35 -30 -5 -0.1 -0.1 70 25 -0.25 -1.0 200 13 V V MHz pF 240 TYP MAX UNIT V V V μA μA conditions IC=-100μA, IE=0 IC=-1mA, IB=0 IE=-100μA, IC=0 VCB=-35V, IE=0 VEB=-5V, IC=0 VCE=-1V, IC=-100mA VCE=-6V, IC=-400mA IC=-100mA, IB=-10mA VCE=-1V, IC=-100mA VCE=-6V, IC=-20mA VCB=-6V, IE=0, f=1MHz CLASSIFICATION OF Rank Range Marking hFE(1) O 70-140 F1O Y 120-240 F1Y １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ KSA1182 Typical Characteristics ２　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５