KTA1663

KTA1663 TRANSISTOR (PNP) SOT-89 FEATURES High current applications Complementary to KTC4375 1. BASE 2. COLLECTOR 3. EMITTER 1 2 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value -30 -30 -5 -1.5 500 150 -55-150 Units V V V A mW ℃ ℃ 3 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE fT Cob Test conditions MIN -30 -30 -5 -0.1 -0.1 100 320 -2 -1 120 50 V V MHz MHz TYP MAX UNIT V V V μA μA IC=-1mA, IE=0 IC=-10mA, IB=0 IE=-1mA, IC=0 VCB=-30V, IE=0 VEB=-5V, IC=0 VCE=-2V, IC=-0.5A IC=-1.5A, IB=-30mA VCE=-2V, IC=-0.5A VCE=-2V, IC=-500mA VCB=-10V, IE=0,f=1MHz CLASSIFICATION OF hFE Rank Range O 100-200 Y 160-320 １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ KTA1663 Typical Characteristics ２　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５