KTA2014

KTA2014 TRANSISTOR (PNP) SOT-323 FEATURES Low frequency power amplifier application Power switching application 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC* TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current –Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value -50 -50 -5 150 100 150 -55-150 Units V V V mA mW ℃ ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off Emitter cut-off current current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) fT Cob NF Test conditions IE=0 MIN -50 -50 -5 -0.1 -0.1 70 400 -0.3 80 7 10 V MHz pF dB TYP MAX UNIT V V V μA μA IC=- 0.1mA, IC= -1mA, IB=0 IE=-0.1mA, IC=0 VCB=-50V, IE=0 VEB= -5V, IC=0 VCE=-6V,IC=-2mA IC=-100mA, IB= -10mA VCE=-10V, IC=-1mA, VCB=-10V, IE=0 f=1MHz VCE=-6V, IC=-0.1mA f=1KHz,Rg=10KΩ DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Noise Figure CLASSIFICATION OF hFE Rank Range MARKING O(2) 70-140 SO Y(4) 120-240 SY GR(6) 200-400 SG １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ KTA2014 Typical Characteristics ２　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ KTA2014 ３　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５