KTC3265

KTC3265 TRANSISTOR (NPN) FEATURES 1. BASE SOT-23 High DC current gain Complementary to KTA1298 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value 35 30 5 800 200 150 -55-150 Units V V V mA mW ℃ ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current DC current gain Collector-emitter saturation voltage base-emitter voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) V BE Test conditions MIN 35 30 5 0.1 0.1 100 320 0.5 0.5 120 13 0.8 V V MHz pF TYP MAX UNIT V V V IC= 100μA, IE=0 IC= 10mA, IB=0 IE=100μA, IC=0 VCB=30 V, IE=0 VEB=5 V, IC=0 VCE=1V, IC= 100mA IC=500mA, IB=20mA VCE=1V,IC=10mA VCE=5V, IC=10mA μA μA fT Cob O f=100MHz VCB=10V,IE=0,f=1MHZ CLASSIFICATION OF Rank Range Marking hFE Y 160-320 EY 100-200 EO １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ KTC3265 Typical Characteristics ２　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５