KTC3875

KTC3875 TRANSISTOR (NPN) SOT-23 FEATURES · High hFE · Low noise · Complementary to KTA1504 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value 60 50 5 150 150 150 -55-150 Units V V V mA mW ℃ ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage base-emitter saturation voltage Transition frequency Collector output capacitance Noise figure Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE(sat) Test IC=100μA,IE=0 IC= 1mA, IB=0 IE= 100μA, IC=0 VCB= 60V, IE=0 VEB= 5V, IC=0 VCE= 6V, IC= 2mA IC=100mA, IB= 10mA IC=100mA, IB= 10mA VCE=10V, IC= 1mA VCB=10V,IE=0,f=1MHZ VCE=6V,IC=0.1mA,Rg=10kΩ,f=1KHZ 80 2.0 1.0 3.5 10 70 0.1 conditions MIN 60 50 5 0.1 0.1 700 0.25 1 V V MHz pF dB TYP MAX UNIT V V V μA μA fT Cob NF O 70-140 ALO CLASSIFICATION OF hFE Rank Range Marking １　 JinYu Y 120-240 ALY GR 200-400 ALG BL 350-700 ALL semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ KTC3875 Typical Characteristics ２　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ KTC3875 ３　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５