KTC3879

KTC3879 TRANSISTOR (NPN) FEATURES  High Power Gain APPLICATIONS  High Frequency Application  HF,VHF Band Amplifier Application 1. BASE 2. EMITTER SOT–23 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RΘJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value 35 30 4 50 150 833 150 -55～+150 Unit V V V mA mW ℃/W ℃ ℃ 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE VCE(sat) VBE(sat) fT Test conditions Min 35 30 4 0.1 0.2 1 40 240 0.4 1 100 V V MHz Typ Max Unit V V V µA µA µA IC=100µA, IE=0 IC=100µA, IB=0 IE=100µA, IC=0 VCB=30V, IE=0 VCE=25V, IB=0 VEB=4V, IC=0 VCE=12V, IC=2mA IC=10mA, IB=1mA IC=10m A, IB=1mA VCE=10V,IC=1mA CLASSIFICATION OF hFE RANK RANGE MARKING R 40–80 RR O 70–140 RO Y 120–240 RY １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５