KTC4076

KTC4076 TRANSISTOR (NPN) FEATURES  Excellent hFE Linearity  Complementary to KTA2015 APPLICATIONS  General Purpose Switching 1. BASE SOT–323 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RΘJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value 35 30 5 500 100 1250 150 -55～+150 Unit V V V mA mW ℃/W ℃ ℃ 2. EMITTER 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE fT Cob Test IC=100µA, IE=0 IC=1mA, IB=0 IE=100µA, IC=0 VCB=35V, IE=0 VEB=5V, IC=0 VCE=1V, IC=100mA VCE=6V, IC=400mA IC=100mA, IB=10mA VCE=1V, IC=100mA VCB=6V,IC=20mA , VCB=6V, IE=0, f=1MHz 300 7 70 25 0.25 1 V V MHz pF conditions Min 35 30 5 0.1 0.1 240 Typ Max Unit V V V µA µA CLASSIFICATION OF hFE(1), hFE(2) RANK RANG hFE(1) hFE(2) MARKING O 70–140 25Min WO Y 120–240 40Min WY １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５