KTC4374

KTC4374 TRANSISTOR (NPN) FEATURES Small Flat Package General Purpose Application SOT-89-3L 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value 80 80 5 400 500 250 150 -55~+150 Unit V V V mA mW ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Collector output capacitance Transition frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE Cob fT Test conditions Min 80 80 5 100 100 70 50 0.4 0.55 10 100 0.8 V V pF MHz 240 Typ Max Unit V V V nA nA IC= 1mA,IE=0 IC=10mA,IB=0 IE=1mA,IC=0 VCB=80V,IE=0 VEB=5V,IC=0 VCE=2V, IC=50mA VCE=2V, IC=200mA IC=200mA,IB=20mA VCE=2V, IC=5mA VCB=10V,IE=0, f=1MHz VCE=10V,IC= 10mA CLASSIFICATION OF hFE RANK RANGE MARKING O 70–140 EO Y 120–240 EY １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５