KTC4378

KTC4378 TRANSISTOR (NPN) FEATURES High voltage SOT-89 1. BASE 2. COLLECTOR 1 2 3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction Temperature Storage Temperature Value 80 60 5 1 0.5 150 -55-150 Units V V V A W ℃ ℃ 3. EMITTER ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) DC current gain hFE(2) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance VCE(sat) VBE(sat) fT Cob VCE=2V,IC=1A IC=500mA,IB=50mA IC=500mA,IB=50mA VCE=10V,IC=50mA VCB=10V,IE=0,f=1MHz 150 12 30 0.5 1.2 V V MHz pF Test conditions MIN 80 60 5 0.1 0.1 100 320 TYP MAX UNIT V V V μA μA IC=1mA,IE=0 IC=10mA,IB=0 IE=1mA,IC=0 VCB=50V,IE=0 VEB=4V,IC=0 VCE=2V,IC=0.05A CLASSIFICATION OF Rank Range Marking １　 JinYu hFE(1) Y 100-200 TY GR 160-320 TGR semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ KTC4378 Typical Characteristics ２　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ KTC4378 ３　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５