M7

M1 THRU M7 Surface Mount General Purpose Silicon Rectifiers Reverse Voltage - 50 to 1000 V Forward Current - 1 A PINNING FEATURES • For surface mounted applications • Low profile package • Glass Passivated Chip Junction • Easy to pick and place • Lead free in comply with EU RoHS 2011/65/EU directives PIN DESCRIPTION 1 Cathode 2 Anode 2 MECHANICAL DATA • Case: SMA • Terminals: Solderable per MIL-STD-750, Method 2026 • Approx. Weight: 0.055g / 0.002oz 1 Top View Marking Code: M1~M7 Simplified outline SMA and symbol Maximum Ratings and Electrical characteristics Ratings at 25 °C ambient temperature unless otherwise specified. Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derate by 20 %. Symbols M1 M2 M3 M4 M5 M6 M7 Units Maximum Repetitive Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 V Maximum Average Forward Rectified Current IF(AV) 1 A Peak Forward Surge Current 8.3 ms Single Half Sine Wave Superimposed on Rated Load IFSM 30 A Maximum Instantaneous Forward Voltage at 1 A VF 1.1 V IR 5 50 μA Cj 15 pF RθJA RθJC 75 25 °C/W T j , T stg -55 ~ +150 °C Parameter Maximum DC Reverse Current Ta = 25 °C at Rated DC Blocking Voltage Ta =125 °C Typical Junction Capacitance Typical Thermal Resistance （1） （2） Operating and Storage Temperature Range （1）Measured at 1 MHz and applied reverse voltage of 4 V D.C （2）P.C.B. mounted with 8*8mm copper pad areas. 1 JinYu Semiconductor www. htsemi. com V:2.0 2022/12 M1 THRU M7 Fig.2 Typical Instaneous Reverse Characteristics Average Forward Current (A) 1.2 1.0 0.8 0.6 0.4 0.2 Single phase half-wave 60 Hz resistive or inductive load 0.0 25 50 75 100 125 150 175 Instaneous Reverse Current (μA) Fig.1 Forward Current Derating Curve 100 T J =150°C 10 T J =125°C T J =100°C 1.0 T J =75°C 0.1 T J =25°C 0.01 0 Case Temperature (°C) 0.7 0.8 Junction Capacitance (pF) 5°C TJ = 2 00 °C =1 J T J =1 25 °C 0.5 T Instaneous Forward Current (A) 1.0 0.1 0.6 0.9 1.0 TJ=25°C 20 15 10 8.3 ms Single Half Sine Wave (JEDEC Method) 100 Transient Thermal Impedance（ °C/W） Peak Forward Surage Current (A) 25 Number of Cycles 10 100 Fig.6- Typical Transient Thermal Impedance 30 10 1.0 0.1 Reverse Voltage (V) 35 1 800 10 1 1.1 Fig.5 Maximum Non-Repetitive Peak Forward Surage Current 00 600 100 Instaneous Forward Voltage (V) 05 400 Fig.4 Typical Junction Capacitance Fig.3 Typical Forward Characteristic 0.2 200 Instaneous Reverse Voltage (V) 100 10 1 0.01 0.1 1 10 100 t, Pulse Duration（sec） 2 JinYu Semiconductor www. htsemi. com V:2.0 2022/12 M1 THRU M7 PACKAGE OUTLINE Plastic surface mounted package; 2 leads A A SMA c b a e B g mil e E A D E B c e g b max 2.2 4.5 2.8 5.3 0.31 1.6 1.5 0.2 min 1.9 4.0 2.4 4.8 0.15 1.3 0.9 0.05 max 87 181 110 209 12 63 59 7.9 min 75 157 94 189 6 51 35 2 UNIT mm g e D The recommended mounting pad size 1.8 (71) 1.8 (71) 2.4 (94) Unit ： mm ( mil) 0.3 12 Marking Type number 1.8 (71) a Marking code M1 M1 M2 M2 M3 M3 M4 M4 M5 M5 M6 M6 M7 M7 3 JinYu Semiconductor www. htsemi. com V:2.0 2022/12