M8550

M8 550 TRANSISTOR(PNP) FEATURES Power dissipation SOT-23 MARKING: Y21 1. BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector power dissipation Junction Temperature Storage Temperature Value -40 -25 -6 -0.8 200 150 -55-150 Units V V V A mW ℃ ℃ 2. EMITTER 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Symbol V(BR)CBO V(BR)CEO* V(BR)EBO ICBO ICEO Test conditions MIN -40 -25 -6 -0.1 -0.1 45 85 40 -0.5 -1.2 150 V V MHz 300 MAX UNIT V V V μA μA IC= -100μA , IE=0 IC= -1mA , IB=0 IE= -100μA, VCB= -35V , VCE= -20V , IC=0 IE=0 IB=0 hFE(1) DC current gain VCE=-1V, IC=-5mA VCE=-1V, IC=-100mA VCE=-1V, IC=-800mA IC= -800mA, IB=-80mA IC=-800mA, IB=-80mA VCE=-6V, IC= -20mA f=30MHz hFE(2) hFE(3) VCE(sat) VBE(sat) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency fT * Pulse Test :pulse width ≤ 300µs , duty cycle ≤2%. hFE(2) L 85-200 CLASSIFICATION OF Rank Range H 200-300 １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ M8 550 ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５