MM1Z3V0

MM1Z2V0~MM1Z75 SILICON PLANAR ZENER DIODES Features • Total power dissipation: max. 500 mW • Small plastic package suitable for surface mounted design • Tolerance approximately ± 5% PINNING PIN 1 2 1 DESCRIPTION Cathode Anode 2 Top View Simplified outline SOD-123 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Power Dissipation Junction Temperature Storage Temperature Range Symbol Ptot Tj TS Value 500 150 - 55 to + 150 Unit mW O C C O Characteristics at Ta = 25 OC Parameter Thermal Resistance Junction to Ambient Air Forward Voltage at IF = 10 mA Symbol RthA VF Max. 340 0.9 Unit O C/W V １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ MM1Z2V0~MM1Z75 Characteristics at Ta = 25 OC Type MM1Z2V0 MM1Z2V2 MM1Z2V4 MM1Z2V7 MM1Z3V0 MM1Z3V3 MM1Z3V6 MM1Z3V9 MM1Z4V3 MM1Z4V7 MM1Z5V1 MM1Z5V6 MM1Z6V2 MM1Z6V8 MM1Z7V5 MM1Z8V2 MM1Z9V1 MM1Z10 MM1Z11 MM1Z12 MM1Z13 MM1Z15 MM1Z16 MM1Z18 MM1Z20 MM1Z22 MM1Z24 MM1Z27 MM1Z30 MM1Z33 MM1Z36 MM1Z39 MM1Z43 MM1Z47 MM1Z51 MM1Z56 MM1Z62 MM1Z68 MM1Z75 1) 2) Marking Code 4A 4B 4C 4D 4E 4F 4H 4J 4K 4M 4N 4P 4R 4X 4Y 4Z 5A 5B 5C 5D 5E 5F 5H 5J 5K 5M 5N 5P 5R 5X 5Y 5Z 6A 6B 6C 6D 6E 6F 6H Zener Voltage Range 1) Vznom V 2.0 2.2 2.4 2.7 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 lZT mA 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 for VZT V 1.8...2.15 2.08...2.33 2.28...2.56 2.5...2.9 2.8...3.2 3.1...3.5 3.4...3.8 3.7...4.1 4...4.6 4.4...5 4.8...5.4 5.2...6 5.8...6.6 6.4...7.2 7...7.9 7.7...8.7 8.5...9.6 9.4...10.6 10.4...11.6 11.4...12.7 12.4...14.1 13.8...15.6 15.3...17.1 16.8...19.1 18.8...21.2 20.8...23.3 22.8...25.6 25.1...28.9 28...32 31...35 34...38 37...41 40...46 44...50 48...54 52...60 58...66 64...72 70...79 Dynamic Impedance 2) ZZT (Max.) Reverse Leakage Current IR (Max.) μA 120 120 120 120 50 20 10 5 5 2 2 1 1 0.5 0.5 0.5 0.5 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 2 2 2 1 1 0.2 0.2 0.2 at VR V 0.5 0.7 1 1 1 1 1 1 1 1 1.5 2.5 3 3.5 4 5 6 7 8 9 10 11 12 13 15 17 19 21 23 25 27 30 33 36 39 43 47 52 57 Ω 100 100 100 110 120 130 130 130 130 130 130 80 50 30 30 30 30 30 30 35 35 40 40 45 50 55 60 70 80 80 90 100 130 150 180 180 200 250 300 at IZ mA 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 2 2 2 2 2 2 2 2 2 2 2 2 VZ is tested with pulses (20 ms). ZZT is measured at IZ by given a very small A.C. current signal. ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ MM1Z2V0~MM1Z75 Breakdown characteristics Tj = constant (pulsed) mA 50 Tj=25o C 2V7 3V3 3V9 4V7 6V8 Iz 40 8V2 5V6 30 20 10 Test current Iz 5mA 0 0 1 2 3 4 5 6 Vz 7 8 9 10 V Breakdown characteristics Tj = constant (pulsed) mA 30 10 12 Tj=25 oC Iz 15 20 18 22 27 33 10 Test current Iz 5mA 0 0 10 20 Vz 30 40 V ３ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ MM1Z2V0~MM1Z75 PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-123 ∠ ALL ROUND c HE D A E bp UNIT mm A 1.15 1.05 bp 0.6 0.5 c 0.135 0.127 A D 2.7 2.6 E 1.65 1.55 HE 3.9 3.7 v 0.2 ∠ 5 O ４ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５