MM1Z4709

MM1Z4689~MM1Z4717 SILICON PLANAR ZENER DIODES PINNING PIN 1 2 DESCRIPTION Cathode Anode 2 1 Top View Simplified outline SOD-123 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Total Device Dissipaton Junction Temperature Storage Temperature Range Symbol Ptot TJ TStg Value 500 150 - 55 to + 150 Unit mW O C C O Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 10 mA Symbol VF Max. 0.9 Unit V １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ MM1Z4689~MM1Z4717 Zener Voltage 1) Type MM1Z4689 MM1Z4690 MM1Z4691 MM1Z4692 MM1Z4693 MM1Z4694 MM1Z4696 MM1Z4697 MM1Z4698 MM1Z4699 MM1Z4700 MM1Z4702 MM1Z4703 MM1Z4705 MM1Z4707 MM1Z4708 MM1Z4709 MM1Z4711 MM1Z4713 MM1Z4714 MM1Z4715 MM1Z4716 MM1Z4717 1) Reverse Leakage Current at lZT IR Max. (µA) 10 10 10 10 10 1 1 1 0.05 0.05 0.05 0.05 0.05 0.05 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 at VR V 3 4 5 5.1 5.7 6.2 6.9 7.6 8.4 9.1 9.8 11.4 12.1 13.6 15.2 16.7 18.2 20.4 22.8 25 27.3 29.6 32.6 Marking Code Nom. BX BY BZ CA CB CC CE CF CH CJ CK CN CP CX CZ DA DB DD DF DH DJ DK DM 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 VZT (V) Min. 4.85 5.32 5.89 6.46 7.13 7.79 8.65 9.5 10.45 11.4 12.35 14.25 15.2 17.1 19 20.9 22.8 25.65 28.5 31.35 34.2 37.05 40.85 Max. 5.36 5.88 6.51 7.14 7.88 8.61 9.56 10.5 11.55 12.6 13.65 15.75 16.8 18.9 21 23.1 25.2 28.35 31.5 34.65 37.8 40.95 45.15 µA 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 Tested with pulses tp = 20 ms. ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ MM1Z4689~MM1Z4717 ３ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ MM1Z4689~MM1Z4717 PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-123 ALL ROUND c HE D A E bp UNIT mm A 1.15 1.05 bp 0.6 0.5 c 0.135 0.100 D 2.7 2.6 E 1.65 1.55 HE 3.9 3.7 A v 0.2 5 O ４ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５