MM1Z4V3B

MM1Z2V2B~MM1Z39B SILICON PLANAR ZENER DIODES Features • Total power dissipation: max. 500 mW • Small plastic package suitable for surface mounted design • High reliability PINNING PIN 1 2 1 DESCRIPTION Cathode Anode 2 Top View Simplified outline SOD-123 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Power Dissipation Junction Temperature Storage Temperature Range Symbol Ptot Tj TStg Value 500 150 - 55 to + 150 Unit mW O C C O Characteristics at Ta = 25 OC Parameter Thermal Resistance Junction to Ambient Air Forward Voltage at IF = 10 mA Symbol RthA VF Max. 340 0.9 Unit O C/W V １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ MM1Z2V2B~MM1Z39B Characteristics at Ta = 25 OC Zener Voltage Range 1) Type Marking Code 9B 9C 9D 9E 9F 9H 9J 9K 9M 9N 9P 9R 9X 9Y 9Z 0A 0B 0C 0D 0E 0F 0H 0J 0K 0M 0N 0P 0R 0X 0Y 0Z Vznom V 2.2 2.4 2.7 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 lZT mA 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 for VZT V 2.1...2.4 2.3…2.65 2.65…2.95 2.95…3.25 3.25…3.55 3.6…3.845 3.89…4.16 4.17…4.43 4.55…4.75 4.98…5.2 5.49…5.73 6.06…6.33 6.65…6.93 7.28…7.6 8.02…8.36 8.85…9.23 9.77…10.21 10.76…11.22 11.74…12.24 12.91…13.49 14.34…14.98 15.85…16.51 17.56…18.35 19.52…20.39 21.54…22.47 23.72…24.78 26.19…27.53 29.19…30.69 32.15…33.79 35.07…36.87 37…41 Dynamic Impedance 2) ZZT (Max.) Ω 100 100 110 120 120 100 100 100 100 80 60 60 40 30 30 30 30 30 30 37 42 50 65 85 100 120 150 200 250 300 100 at IZT mA 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 Reverse Leakage Current IR (Max.) μA 120 120 120 50 20 10 5 5 2 2 1 1 0.5 0.5 0.5 0.5 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 2 at VR V 0.7 1 1 1 1 1 1 1 1 1.5 2.5 3 3.5 4 5 6 7 8 9 10 11 12 13 15 17 19 21 23 25 27 30 MM1Z2V2B MM1Z2V4B MM1Z2V7B MM1Z3V0B MM1Z3V3B MM1Z3V6B MM1Z3V9B MM1Z4V3B MM1Z4V7B MM1Z5V1B MM1Z5V6B MM1Z6V2B MM1Z6V8B MM1Z7V5B MM1Z8V2B MM1Z9V1B MM1Z10B MM1Z11B MM1Z12B MM1Z13B MM1Z15B MM1Z16B MM1Z18B MM1Z20B MM1Z22B MM1Z24B MM1Z27B MM1Z30B MM1Z33B MM1Z36B MM1Z39B 1) 2) VZ is tested with pulses(20 ms). ZZT is measured at IZ by given a very small A.C. current signal. ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ MM1Z2V2B~MM1Z39B PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-123 ALL ROUND c HE D A E bp UNIT mm A 1.15 1.05 bp 0.6 0.5 c 0.135 0.100 D 2.7 2.6 E 1.65 1.55 HE 3.9 3.7 A v 0.2 5 O ３ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５