MM1Z5229B

MM1Z5221B~MM1Z5267B SILICON PLANAR ZENER DIODES PINNING PIN DESCRIPTION Cathode Anode 2 Features • Total power dissipation: Max. 500 mW • Small plastic package suitable for surface mounted design • Tolerance approximately ± 5% 1 2 1 Top View Simplified outline SOD-123 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Power Dissipation Junction Temperature Storage Temperature Range Symbol Ptot Tj TStg Value 500 150 - 55 to + 150 Unit mW O C C O Characteristics at Ta = 25 OC Parameter Thermal Resistance Junction to Ambient Air Forward Voltage at IF = 10 mA Symbol RθJA VF Max. 350 0.9 Unit O C/W V １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ MM1Z5221B~MM1Z5267B Characteristics at Ta = 25 OC Type MM1Z5221B MM1Z5223B MM1Z5225B MM1Z5226B MM1Z5227B MM1Z5228B MM1Z5229B MM1Z5230B MM1Z5231B MM1Z5232B MM1Z5234B MM1Z5235B MM1Z5236B MM1Z5237B MM1Z5239B MM1Z5240B MM1Z5241B MM1Z5242B MM1Z5243B MM1Z5245B MM1Z5246B MM1Z5248B MM1Z5249B MM1Z5250B MM1Z5251B MM1Z5252B MM1Z5253B MM1Z5254B MM1Z5256B MM1Z5257B MM1Z5258B MM1Z5259B MM1Z5260B MM1Z5261B MM1Z5262B MM1Z5263B MM1Z5265B MM1Z5266B MM1Z5267B 1) 2) Marking Code A4 B4 C4 D4 E4 F4 H4 J4 K4 M4 N4 P4 R4 X4 Y4 Z4 A5 B5 C5 D5 E5 F5 K9 H5 J5 K5 M9 M5 N5 P5 R5 X5 Y5 Z5 A6 B6 C6 D6 E6 Zener Voltage Range 1) Vznom V 2.4 2.7 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 19 20 22 24 25 27 30 33 36 39 43 47 51 56 62 68 75 lZT mA 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 9.5 8.5 7.8 7 6.6 6.2 5.6 5.2 5 4.6 4.2 3.8 3.4 3.2 3 2.7 2.5 2.2 2 1.8 1.7 for VZT V 2.28…2.52 2.57…2.84 2.85…3.15 3.14…3.47 3.42…3.78 3.71…4.1 4.09…4.52 4.47…4.94 4.85…5.36 5.32…5.88 5.89…6.51 6.46…7.14 7.13…7.88 7.79…8.61 8.65…9.56 9.5…10.5 10.45…11.55 11.4…12.6 12.35…13.65 14.25…15.75 15.2…16.8 17.1…18.9 18.05…19.95 19…21 20.9…23.1 22.8…25.2 23.75…26.25 25.65…28.35 28.5…31.5 31.35…34.65 34.2…37.8 37.05…40.95 40.85…45.15 44.65…49.35 48.45…53.55 53.2…58.8 58.9…65.1 64.6…71.4 71.25…78.75 Dynamic Impedance 2) ZZT Ω (Max.) 30 30 29 28 24 23 22 19 17 11 7 5 6 8 10 17 22 30 13 16 17 21 23 25 29 33 35 41 49 58 70 80 93 105 125 150 185 230 270 ZZK Ω (Max.) 1200 1300 1600 1600 1700 1900 2000 1900 1600 1600 1000 750 500 500 600 600 600 600 600 600 600 600 600 600 600 600 600 600 600 700 700 800 900 1000 1100 1300 1400 1600 1700 at IZK mA 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 Reverse Current IR µA (Max.) 100 75 50 25 15 10 5 5 5 5 5 3 3 3 3 3 2 1 0.5 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 at VR V 1 1 1 1 1 1 1 2 2 3 4 5 6 6.5 7 8 8.4 9.1 9.9 11 12 14 14 15 17 18 19 21 23 25 27 30 33 36 39 43 47 52 56 VZ is tested with pulses (20 ms) ZZT and ZZK are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits are for IZ(AC) = 0.1 IZ(DC) with the AC frequency = 1 KHz. ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ MM1Z5221B~MM1Z5267B ３ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ MM1Z5221B~MM1Z5267B PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-123 ∠ ALL ROUND c HE D A E bp UNIT mm A 1.15 1.05 bp 0.6 0.5 c 0.135 0.100 A D 2.7 2.6 E 1.65 1.55 HE 3.9 3.7 v 0.2 ∠ 5 O ４ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５