MM1ZB12

MM1Z2B4~MM1ZB75 SILICON PLANAR ZENER DIODES PINNING PIN DESCRIPTION Cathode Anode 2 Features • Power Dissipation: 500 mW • Zener Voltage Tolerance: ± 2% 1 2 1 Top View Simplified outline SOD-123 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Power Dissipation Junction Temperature Storage Temperature Range Symbol Ptot TJ TStg Value 500 150 - 55 to + 150 Unit mW O C C O Characteristics at Ta = 25 OC Parameter Thermal Resistance Junction to Ambient Air Forward Voltage at IF = 10 mA Symbol RthA VF Max. 340 0.9 Unit O C/W V １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ MM1Z2B4~MM1ZB75 Characteristics at Ta = 25 OC Zener Voltage Range 1) Type Marking Code Vznom V lZT mA 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 for VZT V 2.352…2.448 2.646…2.754 2.94…3.06 3.234…3.366 3.528…3.672 3.822…3.978 4.214…4.386 4.606…4.794 4.998…5.202 5.488…5.712 6.076…6.324 6.664…6.936 7.35…7.65 8.036…8.364 8.918…9.282 9.8…10.2 10.78…11.22 11.76…12.24 12.74…13.26 14.7…15.3 15.68…16.32 17.64…18.36 19.6…20.4 21.56…22.44 23.52…24.48 26.46…27.54 29.4…30.6 32.34…33.66 35.28…36.72 38.22…39.78 42.14…43.86 46.06…47.94 49.98…52.02 54.88…57.12 60.76…63.24 66.64…69.36 73.5…76.5 Dynamic Impedance ZZT (Max.) at IZ mA 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 2 2 2 2 2 2 2 2 2 2 2 2 Reverse Leakage Current IR (Max.) μA 120 120 50 20 10 5 5 2 2 1 1 0.5 0.5 0.5 0.5 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 2 2 2 1 1 0.2 0.2 0.2 at VR V 1 1 1 1 1 1 1 1 1.5 2.5 3 3.5 4 5 6 7 8 9 10 11 12 13 15 17 19 21 23 25 27 30 33 36 39 43 47 52 57 Ω 100 110 120 130 130 130 130 130 130 80 50 30 30 30 30 30 30 35 35 40 40 45 50 55 60 70 80 80 90 100 130 150 180 180 200 250 300 MM1Z2B4 5Y1 2.4 MM1Z2B7 5Z1 2.7 MM1Z3B0 6A1 3.0 MM1Z3B3 6B1 3.3 MM1Z3B6 6C1 3.6 MM1Z3B9 6D1 3.9 MM1Z4B3 6E1 4.3 MM1Z4B7 6F1 4.7 MM1Z5B1 6G1 5.1 MM1Z5B6 6H1 5.6 MM1Z6B2 6J1 6.2 MM1Z6B8 6K1 6.8 MM1Z7B5 6L1 7.5 MM1Z8B2 6M1 8.2 MM1Z9B1 6N1 9.1 MM1ZB10 6P1 10 MM1ZB11 6Q1 11 MM1ZB12 6R1 12 MM1ZB13 6S1 13 MM1ZB15 6T1 15 MM1ZB16 6U1 16 MM1ZB18 6W1 18 MM1ZB20 6X1 20 MM1ZB22 6Y1 22 MM1ZB24 6Z1 24 MM1ZB27 7A1 27 MM1ZB30 7B1 30 MM1ZB33 7C1 33 MM1ZB36 7D1 36 MM1ZB39 7E1 39 MM1ZB43 7F1 43 MM1ZB47 7G1 47 MM1ZB51 7H1 51 MM1ZB56 7J1 56 MM1ZB62 7K1 62 MM1ZB68 7L1 68 MM1ZB75 7M1 75 1) VZ is tested with pulses (20 ms). ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ MM1Z2B4~MM1ZB75 PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-123 ∠ ALL ROUND c HE D A E bp UNIT mm A 1.15 1.05 bp 0.6 0.5 c 0.135 0.100 A D 2.7 2.6 E 1.65 1.55 HE 3.9 3.7 v 0.2 ∠ 5 O ３ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５