MM3Z4V3

MM3Z2V0~MM3Z75 Silicon Planar Zener Diodes Features • Total power dissipation : max. 300 mW • Small plastic package suitable for surface mounted design • Tolerance approximately ± 5% PINNING PIN 1 2 1 DESCRIPTION Cathode Anode 2 Top View Simplified outline SOD-323 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Power Dissipation Junction Temperature Storage Temperature Range Symbol Ptot Tj Tstg Value 300 150 - 55 to + 150 Unit mW O C C O Characteristics at Ta = 25 OC Parameter Thermal Resistance Junction to Ambient Air Forward Voltage at IF = 10 mA Symbol RθJA VF Max. 417 0.9 Unit O C/W V １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ MM3Z2V0~MM3Z75 Characteristics at Ta = 25 OC Zener Voltage Range 1) Type MM3Z2V0 MM3Z2V2 MM3Z2V4 MM3Z2V7 MM3Z3V0 MM3Z3V3 MM3Z3V6 MM3Z3V9 MM3Z4V3 MM3Z4V7 MM3Z5V1 MM3Z5V6 MM3Z6V2 MM3Z6V8 MM3Z7V5 MM3Z8V2 MM3Z9V1 MM3Z10 MM3Z11 MM3Z12 MM3Z13 MM3Z15 MM3Z16 MM3Z18 MM3Z20 MM3Z22 MM3Z24 MM3Z27 MM3Z30 MM3Z33 MM3Z36 MM3Z39 MM3Z43 MM3Z47 MM3Z51 MM3Z56 MM3Z62 MM3Z68 MM3Z75 1) Dynamic Impedance ZZT (Max.) Ω 100 100 100 110 120 130 130 130 130 130 130 80 50 30 30 30 30 30 30 35 35 40 40 45 50 55 60 70 80 80 90 100 130 150 180 180 200 250 300 at IZT mA 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 2 2 2 2 2 2 2 2 2 2 2 2 Reverse Leakage Current IR (Max.) μA 120 120 120 120 50 20 10 5 5 2 2 1 1 0.5 0.5 0.5 0.5 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 2 2 2 1 1 0.2 0.2 0.2 at VR V 0.5 0.7 1 1 1 1 1 1 1 1 1.5 2.5 3 3.5 4 5 6 7 8 9 10 11 12 13 15 17 19 21 23 25 27 30 33 36 39 43 47 52 57 Marking Code B0 C0 1C 1D 1E 1F 1H 1J 1K 1M 1N 1P 1R 1X 1Y 1Z 2A 2B 2C 2D 2E 2F 2H 2J 2K 2M 2N 2P 2R 2X 2Y 2Z 3A 3B 3C 3D 3E 3F 3H Vznom V 2.0 2.2 2.4 2.7 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 lZT mA 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 for VZT V 1.8...2.15 2.08...2.33 2.28...2.56 2.5...2.9 2.8...3.2 3.1...3.5 3.4...3.8 3.7...4.1 4...4.6 4.4...5 4.8...5.4 5.2...6 5.8...6.6 6.4...7.2 7...7.9 7.7...8.7 8.5...9.6 9.4...10.6 10.4...11.6 11.4...12.7 12.4...14.1 13.8...15.6 15.3...17.1 16.8...19.1 18.8...21.2 20.8...23.3 22.8...25.6 25.1...28.9 28...32 31...35 34...38 37...41 40...46 44...50 48...54 52...60 58...66 64...72 70...79 VZ is tested with pulses (20 ms). ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ MM3Z2V0~MM3Z75 Breakdown characteristics Tj = constant (pulsed) mA 50 Tj=25o C 2V7 3V3 3V9 4V7 6V8 Iz 40 8V2 5V6 30 20 10 Test current Iz 5mA 0 0 1 2 3 4 5 6 Vz 7 8 9 10 V Breakdown characteristics Tj = constant (pulsed) mA 30 10 12 Tj=25 oC Iz 15 20 18 22 27 33 10 Test current Iz 5mA 0 0 10 20 Vz 30 40 V 300 Power Dissipation: Ptot (mW) 200 100 0 0 25 100 Ambient Temperature: Ta ( C) O 150 Derating Curve ３ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ MM3Z2V0~MM3Z75 PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-323 A c HE D A E bp UNIT mm A 1.10 0.80 bp 0.40 0.25 C 0.15 0.10 D 1.80 1.60 E 1.35 1.15 HE 2.80 2.30 ４ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５