MM3Z5225B

MM3Z5221B~MM3Z5267B Silicon Planar Zener Diodes PINNING Features • Total power dissipation: Max. 300 mW • Small plastic package suitable for surface mounted design • Tolerance approximately ± 5% PIN 1 2 1 DESCRIPTION Cathode Anode 2 Top View Simplified outline SOD-323 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Power Dissipation Junction Temperature Storage Temperature Range Symbol Ptot Tj Tstg Value 300 150 - 55 to + 150 Unit mW O C C O Characteristics at Ta = 25 OC Parameter Thermal Resistance Junction to Ambient Air Forward Voltage at IF = 10 mA Symbol RθJA VF Max. 417 0.9 Unit O C/W V １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ MM3Z5221B~MM3Z5267B Characteristics at Ta = 25 OC Zener Voltage Range 1) Type MM3Z5221B MM3Z5223B MM3Z5225B MM3Z5226B MM3Z5227B MM3Z5228B MM3Z5229B MM3Z5230B MM3Z5231B MM3Z5232B MM3Z5234B MM3Z5235B MM3Z5236B MM3Z5237B MM3Z5239B MM3Z5240B MM3Z5241B MM3Z5242B MM3Z5243B MM3Z5245B MM3Z5246B MM3Z5248B MM3Z5249B MM3Z5250B MM3Z5251B MM3Z5252B MM3Z5253B MM3Z5254B MM3Z5256B MM3Z5257B MM3Z5258B MM3Z5259B MM3Z5260B MM3Z5261B MM3Z5262B MM3Z5263B MM3Z5265B MM3Z5266B MM3Z5267B 1) Dynamic Impedance ZZT Ω (Max.) 30 30 29 28 24 23 22 19 17 11 7 5 6 8 10 17 22 30 13 16 17 21 23 25 29 33 35 41 49 58 70 80 93 105 125 150 185 230 270 ZZK Ω (Max.) 1200 1300 1600 1600 1700 1900 2000 1900 1600 1600 1000 750 500 500 600 600 600 600 600 600 600 600 600 600 600 600 600 600 600 700 700 800 900 1000 1100 1300 1400 1600 1700 at IZK mA 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 Reverse Current IR µA (Max.) 100 75 50 25 15 10 5 5 5 5 5 3 3 3 3 3 2 1 0.5 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 at VR V 1 1 1 1 1 1 1 2 2 3 4 5 6 6.5 7 8 8.4 9.1 9.9 11 12 14 14 15 17 18 19 21 23 25 27 30 33 36 39 43 47 52 56 Marking Code A1 B1 C1 D1 E1 F1 H1 J1 K1 M1 N1 P1 R1 X1 Y1 Z1 A2 B2 C2 D2 E2 F2 N9 H2 J2 K2 P9 M2 N2 P2 R2 X2 Y2 Z2 A3 B3 C3 D3 E3 Vznom V 2.4 2.7 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 19 20 22 24 25 27 30 33 36 39 43 47 51 56 62 68 75 lZT mA 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 9.5 8.5 7.8 7 6.6 6.2 5.6 5.2 5 4.6 4.2 3.8 3.4 3.2 3 2.7 2.5 2.2 2 1.8 1.7 for VZT V 2.28…2.52 2.57…2.84 2.85…3.15 3.14…3.47 3.42…3.78 3.71…4.1 4.09…4.52 4.47…4.94 4.85…5.36 5.32…5.88 5.89…6.51 6.46…7.14 7.13…7.88 7.79…8.61 8.65…9.56 9.5…10.5 10.45…11.55 11.4…12.6 12.35…13.65 14.25…15.75 15.2…16.8 17.1…18.9 18.05…19.95 19…21 20.9…23.1 22.8…25.2 23.75…26.25 25.65…28.35 28.5…31.5 31.35…34.65 34.2…37.8 37.05…40.95 40.85…45.15 44.65…49.35 48.45…53.55 53.2…58.8 58.9…65.1 64.6…71.4 71.25…78.75 VZ is tested with pulses (20 ms) ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ MM3Z5221B~MM3Z5267B 300 Power Dissipation: Ptot (mW) 200 100 0 0 25 100 Ambient Temperature: Ta ( C) O 150 Derating Curve ３ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ MM3Z5221B~MM3Z5267B PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-323 A c HE D A E bp UNIT mm A 1.10 0.80 bp 0.40 0.25 C 0.15 0.10 D 1.80 1.60 E 1.35 1.15 HE 2.80 2.30 ４ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５